PART |
Description |
Maker |
UPD44324085F5-E50-EQ2 UPD44324365F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
NEC[NEC]
|
PD46364092BF1-E40-EQ1 PD46364182BF1-E40-EQ1 PD4636 |
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
GS8180S18 |
1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位独立I/O接口双数据速率读和写模式静态ΣRAM) 1x 18位独立的I / O西格玛的DDR SRAM的(100万18位独立的I / O接口双数据速率读和写模式静态ΣRAM
|
GSI Technology, Inc.
|
CY7C1992CV18-200BZC CY7C1992CV18-200BZI CY7C1992CV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 512K X 36 DDR SRAM, 0.45 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
CY7C1529AV18-200BZXI CY7C1529AV18-250BZXI |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 8M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1529JV18-250BZXC CY7C1529JV18-250BZXI CY7C1529 |
8M X 9 DDR SRAM, 0.45 ns, PBGA165 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
CY7C1420BV18-250BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
GS8330DW36 GS8330DW72 |
(GS8330DW36/72) 36M Double Late Write SRAM
|
GSI Technology
|
GS8662S36GE-250I |
72Mb Burst of 2 DDR SigmaSIO-II SRAM 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
CY7C192-15VXC |
64K x 4 Static RAM with Separate IO; Density: 256 Kb; Organization: 64Kb x 4; Vcc (V): 4.5 to 5.5 V; 64K X 4 STANDARD SRAM, 15 ns, PDSO28 64 K × 4 Static RAM with Separate IO CMOS for optimum speed/power
|
Cypress Semiconductor, Corp.
|
CY7C1002-12PC CY7C1001-12PC CY7C1001-25VC CY7C1001 |
256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 12 ns, PDIP32 256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 25 ns, PDSO32 256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 20 ns, PDIP32 256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 20 ns, PDSO32 256K x 4 Static RAM with Separate I/O 256K X 4 STANDARD SRAM, 20 ns, CDIP32
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|